2N6517

NPNPlasticEncapsulatedTransistor

FEATURES HighVoltageTransistors Complementofthe2N6520

2N6517

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforapplicationsrequiringhighbreakdownvoltage.

2N6517

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:625mW(Tamb=25℃) Collectorcurrent ICM:500mA Collector-basevoltage V(BR)CBO:350V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N6517

TO-92Plastic-EncapsulateTransistors

Features Complementto2N6520

2N6517

HighVoltageTransistors

2N6517

HighVoltageTransistor625mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans

2N6517

NPNEpitaxialSiliconTransistor

Features •HighVoltageTransistor •CollectorDissipation:PC(max)=625mW •Complementto2N6520 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

2N6517

NPNEPITAXIALSILICONTRANSISTOR

HIGHVOLTAGETRANSISTOR •Collector-EmitterVoltage:VCEO=350V •CollectorDissipation:Pc(max)=625mW

2N6517

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *350VoltVCEO *Gainof15atIC=100mA

2N6517

HighVoltageTransistors

HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable*