2SA812

AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA)) •HighVoltage:VCEO=−50V

2SA812

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SA812

Marking：M4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

2SA812

PNP Silicon Epitaxial Transistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

2SA812

TRANSISTOR(PNP)

FEATURES ●Complementaryto2SC1623 ●HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) ●HighVoltage:Vceo=-50V

2SA812

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

2SA812

PNP General Purpose Transistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

2SA812

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

2SA812

TRANSISTOR (PNP)

FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SA812

PNP General Purpose Transistor

■FEATURES PNPGeneralPurposeTransistor