型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
2SA812 | AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V 文件:241.88 Kbytes 页数:4 Pages | NEC 瑞萨 | NEC | |
2SA812 | 丝印:HFE;SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 文件:333.78 Kbytes 页数:6 Pages | RENESAS 瑞萨 | RENESAS | |
2SA812 | PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free 文件:211.78 Kbytes 页数:3 Pages | WEITRON | WEITRON | |
2SA812 | 丝印:M4;Package:SOT-23;Silicon Epitaxial Planar Transistor FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier. 文件:253.17 Kbytes 页数:4 Pages | BILIN 银河微电 | BILIN | |
2SA812 | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. 文件:228.57 Kbytes 页数:1 Pages | DCCOM 道全 | DCCOM | |
2SA812 | PNP General Purpose Transistor ■ FEATURES PNP General Purpose Transistor 文件:221.59 Kbytes 页数:2 Pages | GSME 桂微 | GSME | |
2SA812 | TRANSISTOR(PNP) FEATURES ● Complementary to 2SC1623 ● High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) ● High Voltage: Vceo=-50V 文件:382.47 Kbytes 页数:2 Pages | HTSEMI 金誉半导体 | HTSEMI | |
2SA812 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) • High Voltage: Vceo=-50V 文件:844.45 Kbytes 页数:4 Pages | JIANGSU 长电科技 | JIANGSU | |
2SA812 | PNP Silicon Epitaxial Transistor Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V 文件:123.59 Kbytes 页数:2 Pages | KEXIN 科信电子 | KEXIN | |
2SA812 | 丝印:M4/M5/M6/M7;Package:SOT-23;Silicon Epitaxial Planar Transistor FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier. 文件:1.12207 Mbytes 页数:2 Pages | LUGUANG 鲁光电子 | LUGUANG |
技术参数
- VCEO (V):
-50
- IC @25 °C (A):
-0.1
- VCE (sat) (V):
-0.3
- hFE:
90-600
- Pc (W):
0.2
- fT (Typical) (GHz):
0.18
- Cob (Typical) (pF):
4.5
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
2015+ |
4000 |
公司现货库存 |
询价 | ||||
2015+ |
4000 |
公司现货库存 |
询价 | ||||
NEC |
25+ |
SOT-23 |
32000 |
NEC全新特价2SA812即刻询购立享优惠#长期有货 |
询价 | ||
LRC/蓝箭 |
SOT23 |
1000000 |
2012 |
询价 | |||
NEC |
14+无铅 |
SOT-23 |
25700 |
优势产品,博盛微热卖!!! |
询价 | ||
RENESAS/瑞萨 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
询价 | ||
CJ/长电 |
2021+ |
SOT-23 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
长电 |
2024 |
SOT-23 |
8230 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
询价 | ||
长电/长晶 |
23+ |
SOT-23 |
120000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NEC |
24+ |
SOT23 |
18000 |
原装现货假一罚十 |
询价 |
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