丝印：M4；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features For surface mounted applications Low profile package Glass passivated chip junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives

文件：2.22862 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：M4；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage VCEO=-50V. ● Excellent HFE Linearity. ● High DC current gain : hFE=200 typ. ● Complementary to 2SC4177. APPLICATIONS ● Audio frequency general purpose amplifier applications.

文件：226.7 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M4；Package：SOT-323；PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

文件：1.60625 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：M4；Package：SOT-23；PNP Silicon Epitaxial Transistor

Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V

文件：443.2 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

丝印：M4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.

文件：253.17 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M4；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input OR Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operation voltage range: VCC = 0.9 to 3.6 V (

文件：181.87 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M4；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input OR Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V (

文件：180.89 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M4；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M4；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP

丝印：M4；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：73.09 Kbytes 页数：11 Pages

PHI

飞利浦