AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complementary to 2SC4177 ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, Ic = -1.0 mA) ● High Voltage: VCEO = -50 VCE

文件：194.83 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTOR

AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

文件：322.72 Kbytes 页数：6 Pages

RENESAS

瑞萨

丝印：M4；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage VCEO=-50V. ● Excellent HFE Linearity. ● High DC current gain : hFE=200 typ. ● Complementary to 2SC4177. APPLICATIONS ● Audio frequency general purpose amplifier applications.

文件：226.7 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

文件：280.38 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

文件：1.05005 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Silicon Epitaxia

■ Features ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

文件：48 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Silicon Plastic Encapsulated Transistor

-0.1A , -60V PNP Silicon Plastic Encapsulated Transistor FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

文件：109.78 Kbytes 页数：1 Pages

SECOS

喜可士

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

文件：1.88523 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：124.09 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

文件：1.60625 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司