2SA812

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) •HighVoltage:Vceo=-50V

2SA812

Plastic-Encapsulate Transistors

Features: 1.hFEishigh,hFE=200(TYP)VCE=-6V,IC=-1mA; 2.Highvoltage,VCEO=-50V; Applications: Forgeneralamplification,itiscomplementaryto2SC1623.

2SA812

Plastic-Encapsulate Transistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

2SA812

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SC1623. Applications Audiofrequencyamplifierapplication.

2SA812

Marking：M4；Package：SOT-23；PNP Silicon Epitaxial Transistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

2SA812

Marking：HFE；SILICON TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

2SA812

Plastic-Encap sulate Transistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

2SA812

Marking：M4/M5/M6/M7；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

2SA812

Marking：M6；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES •Commplementaryto2SC1623. •HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) •HighVoltage:VCEO=-50V. APPLICATIONS •Audiofrequency,generalpurposeamplifier.

2SA812

PNP Plastic-Encapsulate Transistors