SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V

文件：1.60188 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.58 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SC1623. Applications Audio frequency amplifier application.

文件：626.96 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：M6；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES • Commplementary to 2SC1623. • High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) • High Voltage: VCEO=-50V. APPLICATIONS • Audio frequency, general purpose amplifier.

文件：2.3639 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encap sulate Transistors

FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V

文件：526.31 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：M4；Package：SOT-23；PNP Silicon Epitaxial Transistor

Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V

文件：443.2 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V

文件：306.61 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulate Transistors

Features: 1. hFE is high, hFE=200(TYP) VCE=-6V, IC=-1mA; 2. High voltage, VCEO=-50V; Applications: For general amplification, it is complementary to 2SC1623.

文件：723.93 Kbytes 页数：2 Pages

SHENZHENSLS

三联盛

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：69.25 Kbytes 页数：1 Pages

TEL

东电电子

PNP Plastic-Encapsulate Transistors

文件：1.70898 Mbytes 页数：5 Pages

JINGHENG

晶恒