2SA812

Marking：HFE；SILICON TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

2SA812A

Marking：HFE；SILICON TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623A •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

4.0SMDJ26A

Marking：HFE；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peakpowerdissipation4000w@10x1000usPulse Lowprofilepackage. Excellentclampingcapability. TypicalIRlessthan2uAwhenVBRabove12V. Glasspassivatedjunction. Fastresponsetime:typicallylessthan1.0psfrom0Voltsto BVmin IEC61000-4-2ESD30KV(Air),30KV(Conta

SMDJ26A

Marking：HFE；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime ClassificationRating94V-O GlassPassivatedDieConstruction PlasticCaseMaterialhasULFlammability

SMLJ26A

Marking：HFE；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHScompliant* SurfaceMountSMCpackage StandoffVoltage:5.0to170volts PowerDissipation:3000watts Typicaltemperaturecoefficient: ΔVBR=0.1xVBR@25°CxΔT Applications IEC61000-4-2ESD(Min.Level4) IEC61000-4-4EFT IEC61000-4-5Surge

2SD1366A

Marking：hFE；Package：SOT-89；Silicon NPN Epitaxial

SMDJ26A

Marking：HFE；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

1648-Z

Marking：HFE2；Package：TO-252；SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING DESCRIPTION The2SA1648isamoldpowertransistordevelopedforhigh-speed switchingandfeaturesaverylowcollector-to-emittersaturation voltage. Thistransistorisidealforuseinswitchingregulators,DC/DC converters,moto

1649-Z

Marking：HFE2；Package：TO-252；SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING

2SA1645

Marking：HFE2；Package：TO-220AB；SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SA1645isamoldpowertransistordevelopedforhighspeed switchingandfeaturesaverylowcollector-to-emitter saturationvoltage.Thistransistorisidealforuseinswitching powersupplies,DC/DCconverters,motordrivers,so