丝印：HFH；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：614.17 Kbytes 页数：6 Pages

Huashan

华汕电子器件

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：635.97 Kbytes 页数：6 Pages

Huashan

华汕电子器件

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：622.12 Kbytes 页数：6 Pages

Huashan

华汕电子器件

900V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 55 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V ❐

文件：1.1809 Mbytes 页数：7 Pages

SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：687.15 Kbytes 页数：6 Pages

Huashan

华汕电子器件

900V N-Channel MOSFET

Features ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ 100 Avalanche Tested ❐ RoHS Compliant ❐ Built-in ESD Diode

文件：223.15 Kbytes 页数：10 Pages

SEMIHOW

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文件：134.75 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技

.050 HEADER SET .050 X .050 [1.27 X 1.27] CENTERLINE

文件：134.75 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技

.050 HEADER SET .050 X .050 [1.27 X 1.27] CENTERLINE

文件：134.75 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技