N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：635.97 Kbytes 页数：6 Pages

HUASHAN

华汕电子器件

场效应管

Huashan

华汕电子器件

500V N-Channel MOSFET

文件：792 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

500V N-Channel MOSFET

文件：868.91 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

500V N-Channel Planar MOSFET

Features RDSON=0.17Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73.4nC) Low Crss (typical 4.8pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)

文件：2.65431 Mbytes 页数：11 Pages

SY

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