PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

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NEC

瑞萨

丝印：HFE2；Package：TO-220AB；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, so

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RENESAS

瑞萨

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

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ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

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JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VcEo

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

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SAVANTIC

Silicon PNP Power Transistors

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JMNIC

锦美电子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor • Fast switching speed\n• Low collector-to-emitter saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −4 A;

Renesas

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

文件：143.03 Kbytes 页数：6 Pages

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Developed for use in switching power supplies, DC/DC

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ISC

无锡固电