PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

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丝印：HFE2；Package：TO-220AB；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, so

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isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Developed for use in switching power supplies, DC/DC

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ISC

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor • Fast switching speed\n• Low collector-to-emitter saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −4 A;

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PNP epitaxial type silicon transistor

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