丝印：HFE；SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50

文件：390.7 Kbytes 页数：6 Pages

RENESAS

瑞萨

Transistor-Bipolar Small Signal Transistors

Renesas

瑞萨

PNP Epitaxial Planar Transistor

FEATURES • Complementary to 2SC1623K • High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) • High Voltage: VCEO = -50V

文件：243.83 Kbytes 页数：2 Pages

SECOS

喜可士

General Purpose Transistors

FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified

文件：826.89 Kbytes 页数：5 Pages

YEASHIN

亚昕科技

General Purpose Transistors

FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified

文件：826.89 Kbytes 页数：5 Pages

YEASHIN

亚昕科技