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Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

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文件：1.50981 Mbytes 页数：36 Pages

TI

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丝印：HFF；Package：SC70；SN74AUP1G14 Low-Power Single Schmitt-Trigger Inverter

文件：1.50981 Mbytes 页数：36 Pages

TI

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N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：716.92 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：732.98 Kbytes 页数：6 Pages

Huashan

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N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：649.71 Kbytes 页数：7 Pages

Huashan

华汕电子器件

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EUROQUARTZ

石英公司

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文件：232.84 Kbytes 页数：5 Pages

Huashan

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