HFF2N60资料使用说明书原装现货HUASHAN-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HFF2N60	文件：234.17 Kbytes Page：5 Pages	N-Channel MOSFET 文件：234.17 Kbytes 页数：5 Pages	HUASHAN 华汕电子器件	HUASHAN
HFF2N60	文件：300 bytes Page：1 Pages	场效应管	Huashan 华汕电子器件	Huashan
MTB2N60E	文件：271.17 Kbytes Page：10 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件：271.17 Kbytes 页数：10 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTP2N60E	文件：219.5 Kbytes Page：8 Pages	TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h 文件：219.5 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多HFF2N60供应商更新时间2026-4-20 14:07:00