MTP2N60E中文资料Motorola数据手册PDF规格书
MTP2N60E规格书详情
TMOS E-FET™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
MTP2N60E
- 制造商:
MOTOROLA
- 制造商全称:
Motorola, Inc
- 功能描述:
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
O |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
ON |
23+ |
TO-220 |
286 |
正规渠道,只有原装! |
询价 | ||
O |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON/安森美 |
23+ |
TO-247 |
15446 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MOT |
05+ |
TO-220 |
3000 |
原装进口 |
询价 | ||
ON |
2020+ |
TO-220 |
35000 |
100%进口原装正品公司现货库存 |
询价 | ||
ON |
2023+ |
TO-220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ON |
23+ |
TO-220 |
6893 |
询价 | |||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 |