MTP2N50E中文资料Motorola数据手册PDF规格书
MTP2N50E规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
MTP2N50E
- 制造商:
Motorola Inc
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO220 |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
ON |
N/A |
2410 |
询价 | ||||
VB |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
O |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
VBsemi |
24+ |
TO220 |
5273 |
询价 | |||
O |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MOT |
06+ |
TO-220 |
3000 |
原装 |
询价 | ||
MOTOROLA |
22+ |
TO-220 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
VBsemi |
2023+ |
TO220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 |