HFF11N60S中文资料PDF规格书
HFF11N60S规格书详情
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
• 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
• RoHS compliant
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Zeasset(智胜新) |
2027+ |
Snap in,22x20mm |
8420 |
代理优势渠道,假一赔十现货或订货 |
询价 | ||
HF |
23+ |
DIP |
100000 |
专营进口原装继电器 长期供货 深圳现货 |
询价 | ||
EPSON/爱普生 |
21+ROHS |
SMD |
32643 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
TOYOCOM |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
HARVATEK |
1922+ |
NA |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
HF宏发 |
20+ |
16300 |
只做全新原装,支持样品 |
询价 | |||
FSC |
2021++ |
SMD |
10000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
询价 | ||
宏发 |
22+ |
DIP |
5000 |
原装正品 备货两天 QQ询价落实库存 |
询价 |