FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA） ● Excellent

文件：176.26 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

Silicon PNP Epitaxial

Features Small collector to emitter saturation voltage. Excelent lineary DC forward current gain. Super mini package for easy mounting.

文件：37.73 Kbytes 页数：1 Pages

KEXIN

科信电子

SILICON PNP EPITAXIAL TYPE(mini type) SMALL-SIGNAL TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATIONDESCRIPTION\n2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application.\n.\nFEATURE\n●Small collector to emitter saturation voltage.\nVCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA）\n●Excellent linearity

IDC

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：69.34 Kbytes 页数：1 Pages

TEL

丝印：ME/MF/MG；Package：SOT-23；PNP epitaxial type transistor designed for low frequency.

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

文件：1.0584 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES  Low Collector Current  Low Collector Power Dissipation

文件：1.62201 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.14 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

PNP Silicon Plastic Encapsulated Transistor

FEATURES Low Collector Current Low Collector Power Dissipation

文件：109.17 Kbytes 页数：1 Pages

SECOS

喜可士

Plastic-Encapsulate Transistors

Features  Low Collector Current  Low Collector Power Dissipation

文件：1.36869 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 0.2 W（ Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V(BR) CBO: -60 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：854.34 Kbytes 页数：4 Pages

JIANGSU

长电科技