PNP TRANSISTOR

[DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.] TRANSISTOR（ PNP ） FEATURES Power dissipation PCM: 0.2 W（Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ t

文件：313.35 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSISTOR(PNP)

FEATURES Low Collector Current Low Collector Power Dissipation

文件：300.42 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ・ Super mini package for easy mounting ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify appli

文件：180.95 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 0.2 W（ Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V(BR) CBO: -60 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：854.34 Kbytes 页数：4 Pages

JIANGSU

长电科技

PNP Silicon Plastic Encapsulated Transistor

FEATURES Low Collector Current Low Collector Power Dissipation

文件：109.17 Kbytes 页数：1 Pages

SECOS

喜可士

丝印：ME/MF/MG；Package：SOT-23；PNP epitaxial type transistor designed for low frequency.

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

文件：1.0584 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES  Low Collector Current  Low Collector Power Dissipation

文件：1.62201 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.14 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

丝印：ME；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

文件：135.71 Kbytes 页数：3 Pages

BILIN

银河微电

Plastic-Encapsulate Transistors

Features  Low Collector Current  Low Collector Power Dissipation

文件：1.36869 Mbytes 页数：3 Pages

GWSEMI

唯圣电子