首页 >2SB1182>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SB1182

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

文件:166.54 Kbytes 页数:4 Pages

UTC

友顺

2SB1182

PNP PLASTIC ENCAPSULATE TRANSISTORS

PNP PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free

文件:1.13367 Mbytes 页数:5 Pages

WEITRON

2SB1182

丝印:TL;Package:CPT3;Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

文件:93.7 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

文件:124.57 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

文件:153.4 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor

文件:180.38 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

文件:180.38 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium power transistor (32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

文件:116.67 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

文件:180.38 Kbytes 页数:4 Pages

ROHM

罗姆

2SB1182

Medium power Transistor(32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

文件:134.9 Kbytes 页数:4 Pages

ROHM

罗姆

晶体管资料

  • 型号:

    2SB1182

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

  • 极限工作电压:

    40V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

  • 可代换的型号:

    2SB837,2SB928,2SB1274,

  • 最大耗散功率:

    10W

  • 放大倍数:

  • 图片代号:

    NO

  • vtest:

    40

  • htest:

    999900

  • atest:

    2

  • wtest:

    10

技术参数

  • Polarity:

    PNP

  • PCM(W):

    1.5

  • IC(A):

    -2

  • VCBO(V):

    -40

  • VCEO(V):

    -32

  • VEBO(V):

    -5

  • hFEMin:

    82

  • hFEMax:

    390

  • hFE@VCE(V):

    -3

  • hFE@IC(A):

    -0.5

  • VCE(sat)(V):

    -0.8

  • VCE(sat)@IC(A):

    -2

  • VCE(sat)@IB(A):

    -0.2

  • Package:

    TO-251

供应商型号品牌批号封装库存备注价格
ROHM
2016+
TO252
4291
只做原装,假一罚十,公司可开17%增值税发票!
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ/长电
24+
TO-252
10000
只有原装
询价
NK/南科功率
2025+
TO-252
2500
国产南科平替供应大量
询价
ROHM
24+
TO-252
8700
新进库存/原装
询价
ROHM
04+
SOT252
4370
全新原装进口自己库存优势
询价
ROHM
24+/25+
2198
原装正品现货库存价优
询价
ROHM
24+
SOT-252
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
长电
25+
TO-252
8665
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ROHM
17+
TO-252
6200
100%原装正品现货
询价
更多2SB1182供应商 更新时间2026-4-22 13:20:00