丝印：TL；Package：CPT3；Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

文件：93.7 Kbytes 页数：4 Pages

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丝印：TL；Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：80.41 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Power Transistor (-160V , -1.5A)

Features 1) High breakdown voltage.(BVCEO= -160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

文件：84.04 Kbytes 页数：4 Pages

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丝印：TL；Package：CPT3；Power Transistor (−100V , −2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

文件：78.28 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

文件：107.17 Kbytes 页数：5 Pages

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丝印：TL；Package：CPT3；Power Transistor (-80V, -4A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：39.42 Kbytes 页数：1 Pages

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丝印：TL；Package：CPT3；Power Transistor (-80V, -4A)

Power transistor ( -80V, -4A) : 2SB1474, 2SB1342 Power transistor (80V, 4A) : 2SD1933

文件：53.88 Kbytes 页数：1 Pages

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丝印：TL；Package：CPT3；Low Vce(sat) Transistor (Strobe flash) (20V, 10A)

Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / IB= 4A / 50mA. 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834.

文件：68.46 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Power transistor (40V, 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

文件：72.03 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Power Transistor 50V, 3A

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

文件：77.01 Kbytes 页数：3 Pages

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