MEDIUM POWER TRANSISTOR(-32V, -2A)

文件：538.33 Kbytes 页数：11 Pages

ROHM

罗姆

Medium Power Transistor

FEATURES ● Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ● Complements the 2SD1758 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor.

文件：176.71 Kbytes 页数：4 Pages

BILIN

银河微电

isc Silicon PNP Power Transistor

DESCRIPTION • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation

文件：329.06 Kbytes 页数：3 Pages

ISC

无锡固电

TO-252-2L(4R) Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Dissipation

文件：1.36409 Mbytes 页数：4 Pages

JIANGSU

长电科技

Medium Power Transistor

■ Features ● Low VCE(sat).VCE(sat) = -0.5V ● Complementary to 2SD1758

文件：39.98 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),complements the 2SD1758. Applications Medium power amplifier applications.

文件：757.83 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Bipolar Transistor

The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. • High current output up to 3A \n• Low saturation voltage;

UTC

友顺

双极型晶体管

LGE

鲁光电子

32V,2A,Medium Power PNP Bipolar Transistor

Galaxy

银河微电

PNP Silicon General Purpose Transistor

FEATURES The 2SB1182DX is designed for medium power amplifier application Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product

文件：263.59 Kbytes 页数：2 Pages

SECOS

喜可士