LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

文件：150.48 Kbytes 页数：2 Pages

UTC

友顺

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

文件：254.94 Kbytes 页数：4 Pages

WEITRON

Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.

文件：101.55 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：AE*；Package：SOT-89；Low VCE(sat) Transistor

FEATURES ● Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ● Excellent DC current gain characterisitics. ● Complementary the 2SD2150. APPLICATIONS ● This device is designed as a general purpose amplifier and switching.

文件：187.19 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES ● Excellent DC Current Gain ● Low Collector-emitter saturation voltage ● Complement the 2SD2150

文件：260.769 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

文件：1.61084 Mbytes 页数：4 Pages

JIANGSU

长电科技

Low VCE(sat) Transistor

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：52.38 Kbytes 页数：1 Pages

KEXIN

科信电子

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

文件：72.21 Kbytes 页数：4 Pages

ROHM

罗姆

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

文件：183.08 Kbytes 页数：2 Pages

SECOS

喜可士

SOT-89-3L Plastic-Encapsulate PNP Transistors

FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

文件：1.01929 Mbytes 页数：3 Pages

LUGUANG

鲁光电子