2SB1424

Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SB1424

Low VCE(sat) Transistor

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

2SB1424

PNP Silicon Medium Power Transistor

FEATURES Powerdissipation PCM:600mWTemp.=25°C Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJTstg:-55°Cto+150°C

2SB1424

TRANSISTOR(PNP)

FEATURES ●ExcellentDCCurrentGain ●LowCollector-emittersaturationvoltage ●Complementthe2SD2150

2SB1424

LOW VCE(SAT) TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

2SB1424

SOT-89-3L Plastic-Encapsulate PNP Transistors

FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150

2SB1424

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150

2SB1424

Marking：AE*；Package：SOT-89；Low VCE(sat) Transistor

FEATURES ●LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD2150. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifier andswitching.

2SB1424

Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA).

FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150.

2SB1424

Low VCE(sat) Transistor (??0V, ??A)

Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor