TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS ​​​​​​​DRIVER STAGE AMPLIFIER APPLICATIONS ​​​​​​​ • High Transition Frequency: fT= 70 MHz (Typ.) • Complementary to 2SC4793

文件：148.18 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS

POWER AMPLIFIER, APPLICATIONS DRIVER, STAGE AMPLIFIER, APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793

文件：108.84 Kbytes 页数：3 Pages

UTC

友顺

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SC4793 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

文件：88.88 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4793 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：196.56 Kbytes 页数：4 Pages

JMNIC

锦美电子

Power Amplifier Applications

FEATURES ● High collector voltage˖ VCEO=-230V (min) ● Complementary to 2SC4793 ● High transition frequency :fT=70MHz(Typ.) ● RoHS product APPLICATIONS ● Power Amplifier Applications

文件：246.8 Kbytes 页数：4 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SC4793 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

文件：122.94 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4793 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：245.94 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SC4793 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier app

文件：1.04717 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

20 Watt Silicon Epitaxial Planar Process PNP Power Transistor

文件：457.07 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体