型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
2SA733 | PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA) 文件:69.04 Kbytes 页数:1 Pages | NEC 瑞萨 | NEC | |
2SA733 | PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. 文件:129.3 Kbytes 页数:4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
2SA733 | PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature +150°C Maximum Maximum Powe 文件:410.6 Kbytes 页数:6 Pages | RENESAS 瑞萨 | RENESAS | |
2SA733 | 丝印:CS;Package:SOT-23;Silicon Epitaxial Planar Transistor FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier. 文件:227.04 Kbytes 页数:4 Pages | BILIN 银河微电 | BILIN | |
2SA733 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation 文件:798.92 Kbytes 页数:1 Pages | DAYA 大亚电器 | DAYA | |
2SA733 | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applicatioms. 文件:215.19 Kbytes 页数:1 Pages | DCCOM 道全 | DCCOM | |
2SA733 | Collector-Base Voltage: VCBO=-60V Features ● Collector-Base Voltage: VCBO=-60V 文件:1.13585 Mbytes 页数:2 Pages | KEXIN 科信电子 | KEXIN | |
2SA733 | PNP Plastic Encapsulated Transistor FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V 文件:284.51 Kbytes 页数:2 Pages | SECOS 喜可士 | SECOS | |
2SA733 | PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA733 is designed for use in driver stage of AF amplifier applications.. 文件:51.13 Kbytes 页数:3 Pages | TGS | TGS | |
2SA733 | 丝印:CS;Package:SOT-23;Silicon Epitaxial Planar Transistor FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier. 文件:1.60177 Mbytes 页数:3 Pages | LUGUANG 鲁光电子 | LUGUANG |
技术参数
- VCEO (V):
50
- hFE min.:
90
- hFE max.:
600
- Pc (W):
0.25
- Production Status:
EOL
- Downloadable:
SPICE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
蓝箭 |
TO92 |
100000 |
2012 |
询价 | |||
NEC |
2014+ |
260 |
公司现货库存 |
询价 | |||
CJ |
17+ |
SOT-23 |
5753 |
全新原装正品s |
询价 | ||
长电 |
14+无铅 |
SOT-23 |
25700 |
优势产品,博盛微热卖!!! |
询价 | ||
RENESAS/瑞萨 |
20+ |
SOT-323 |
120000 |
原装正品 可含税交易 |
询价 | ||
CJ/长电 |
2021+ |
SOT-23 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
NEC |
2410+ |
TO-92 |
20000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
NEC |
2024 |
TO-92 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
询价 | ||
NEC |
16+ |
SOT-23/TO-92 |
78000 |
询价 | |||
NEC |
24+ |
原厂封装 |
3500 |
原装现货假一罚十 |
询价 |
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