TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

文件：203.43 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

文件：200.71 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：NO；Package：SOT-89；Silicon Planar Epitaxial Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Small flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2873

文件：173.38 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

文件：189.21 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

文件：1.5215 Mbytes 页数：4 Pages

JIANGSU

长电科技

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

文件：501.6 Kbytes 页数：3 Pages

KEXIN

科信电子

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

文件：227.58 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Silicon Medium Power Transistor

*Features Low power dissipation 0.5W Collector Current -2A *Stucture Epitaxial planar type. PNP silicon transistor.

文件：289.44 Kbytes 页数：3 Pages

SECOS

喜可士

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

文件：584.14 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：75.63 Kbytes 页数：1 Pages

WINNERJOIN

永而佳