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2N6661

N-Channel, Enhancement-Mode, Vertical DMOS FET

Description 2N6661 is an enhancement-mode (normally-off) tran istor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This comination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive

文件:313.76 Kbytes 页数:10 Pages

Microchip

微芯科技

2N6661

N-Channel 80-V and 90-V (D-S) MOSFETS

FEATURES ● Low On-Resistance: 3.6 Ω ● Low Threshold: 1.6 V ● Low Input Capacitance: 35 pF ● Fast Switching Speed: 6 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件:46.44 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世科技

2N6661

TMOS SWITCHING FET TRANSISTORS

文件:441.47 Kbytes 页数:3 Pages

Motorola

摩托罗拉

2N6661

TMOS SWITCHING TRANSISTOR

文件:156.38 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6661

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

FEATURES • Switching Regulators • Converters • Motor Drivers

文件:17.09 Kbytes 页数:2 Pages

SEME-LAB

Seme LAB

2N6661

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

文件:21.45 Kbytes 页数:2 Pages

SUTEX

2N6661

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available

文件:83.04 Kbytes 页数:3 Pages

TTELEC

2N6661

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:395.58 Kbytes 页数:3 Pages

SUTEX

2N6661

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:82.73 Kbytes 页数:3 Pages

SEME-LAB

Seme LAB

2N6661

N-Channel 90 V (D-S) MOSFET

文件:130.4 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世科技

技术参数

  • BVdss min (V):

    90

  • Rds (on) max (Ohms):

    4.0

  • CISSmax (pF):

    50

  • Vgs(th) max (V):

    2.0

  • Packages:

    3\\TO-39

供应商型号品牌批号封装库存备注价格
SSI
24+
CAN
4500
原装现货,可开13%税票
询价
SSI
11
TO-39-3
6000
原装正品现货
询价
SSI
23+
TO-39
16800
进口原装现货
询价
MICROCHIP(美国微芯)
24+
TO-5
8145
支持大陆交货,美金交易。原装现货库存。
询价
SSI
24+
CAN
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
询价
SSI
23+
TO-39
6850
只做原装正品假一赔十为客户做到零风险!!
询价
MOTOROLA
24+
CAN3
500
原装现货假一罚十
询价
VISHAY/SILICONIX
16+
NA
8800
原装现货,货真价优
询价
SI
23+
TO-39
5000
原装正品,假一罚十
询价
MOT
24+
CAN3
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多2N6661供应商 更新时间2025-10-4 8:40:00