型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
2N6661 | N-Channel, Enhancement-Mode, Vertical DMOS FET Description 2N6661 is an enhancement-mode (normally-off) tran istor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This comination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive 文件:313.76 Kbytes 页数:10 Pages | Microchip 微芯科技 | Microchip | |
2N6661 | N-Channel 80-V and 90-V (D-S) MOSFETS FEATURES ● Low On-Resistance: 3.6 Ω ● Low Threshold: 1.6 V ● Low Input Capacitance: 35 pF ● Fast Switching Speed: 6 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI 文件:46.44 Kbytes 页数:4 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
2N6661 | TMOS SWITCHING FET TRANSISTORS
文件:441.47 Kbytes 页数:3 Pages | Motorola 摩托罗拉 | Motorola | |
2N6661 | TMOS SWITCHING TRANSISTOR
文件:156.38 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6661 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES • Switching Regulators • Converters • Motor Drivers 文件:17.09 Kbytes 页数:2 Pages | SEME-LAB Seme LAB | SEME-LAB | |
2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, 文件:21.45 Kbytes 页数:2 Pages | SUTEX | SUTEX | |
2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available 文件:83.04 Kbytes 页数:3 Pages | TTELEC | TTELEC | |
2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs 文件:395.58 Kbytes 页数:3 Pages | SUTEX | SUTEX | |
2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:82.73 Kbytes 页数:3 Pages | SEME-LAB Seme LAB | SEME-LAB | |
2N6661 | N-Channel 90 V (D-S) MOSFET 文件:130.4 Kbytes 页数:6 Pages | VishayVishay Siliconix 威世科技 | Vishay |
技术参数
- BVdss min (V):
90
- Rds (on) max (Ohms):
4.0
- CISSmax (pF):
50
- Vgs(th) max (V):
2.0
- Packages:
3\\TO-39
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SSI |
24+ |
CAN |
4500 |
原装现货,可开13%税票 |
询价 | ||
SSI |
11 |
TO-39-3 |
6000 |
原装正品现货 |
询价 | ||
SSI |
23+ |
TO-39 |
16800 |
进口原装现货 |
询价 | ||
MICROCHIP(美国微芯) |
24+ |
TO-5 |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
SSI |
24+ |
CAN |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
询价 | ||
SSI |
23+ |
TO-39 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MOTOROLA |
24+ |
CAN3 |
500 |
原装现货假一罚十 |
询价 | ||
VISHAY/SILICONIX |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
SI |
23+ |
TO-39 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT |
24+ |
CAN3 |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
相关规格书
更多- AIP5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- 4TPE330MW
相关库存
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- 4TPE330M