RJH60F0DPK-00-T0说明书PDF资料批发供应-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJH60F0DPK	文件：166.8 Kbytes Page：4 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 文件：166.8 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPK-00-T0	文件：166.8 Kbytes Page：4 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 文件：166.8 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPQ-A0	文件：112.47 Kbytes Page：8 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 文件：112.47 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPQ-A0-T0	文件：112.47 Kbytes Page：8 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 文件：112.47 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F3DPK	文件：94.23 Kbytes Page：8 Pages	Silicon N Channel IGBT High Speed Power Switching Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode in one package ● Trench gate and thin wafer technology ● High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 文件：94.23 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F3DPQ-A0	文件：94.94 Kbytes Page：8 Pages	600 V - 20 A - IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, 文件：94.94 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK	文件：221.83 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC= 文件：221.83 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK-00-T0	文件：221.83 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC= 文件：221.83 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPQ-A0	文件：113.43 Kbytes Page：8 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta 文件：113.43 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPQ-A0-T0	文件：113.43 Kbytes Page：8 Pages	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta 文件：113.43 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

详细参数

型号：
RJH60F
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
Silicon N Channel IGBT High Speed Power Switching

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	RJH60F0DPQ	RENESAS	23+	TO247	50000	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	RJH60F0DPQ	RENESAS/瑞萨	23+	TO247	50000	全新原装正品现货,支持订货	询价
深圳市晨豪科技有限公司	RJH60F0DPQ	RENESAS/瑞萨	23+	TO-247	89630	当天发货全新原装现货	询价
深圳市科恒伟业电子有限公司	RJH60F0DPQ	RENESAS/瑞萨	2517+	TO247	8850	只做原装正品现货或订货假一赔十!	询价
深圳市河锋鑫科技有限公司	RJH60F0DPQA0#T0	Renesas	22+	TO247A	9000	原厂渠道,现货配单	询价
深圳市鹏顺微电子科技有限公司	RJH60F0DPQ-A0#T0	Renesas Electronics America	2022+	TO-247A	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市宏捷佳电子科技有限公司	RJH60F0DPQ-A0#T0	Renesas Electronics America In	25+	TO-247-3	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市科芯源微电子有限公司	RJH60F0DPQ-A0#T0	RENESAS/瑞萨	2026+	原厂原封可拆样	54648	百分百原装现货实单必成欢迎询价	询价
洪芯国际半导体（深圳）有限公司	RJH60F0DPQ-A0#T0	renesas	26+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
贸泽芯城（深圳）电子科技有限公司	RJH60F0DPQ-AO	RENESAS/瑞萨	23+	TO-247	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价

更多RJH60F供应商更新时间2026-2-10 10:06:00

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