| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheatgenerat | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standar | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standar | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackage | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50VlowVCEsatNPNtransistor FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standardpackagedtransistorsduetoenhancedperformance. APPLICATIONS •Supplylineswitchingcircuits •Batterymanagement | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheatgenerat | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50V,2.7APNP/PNPlowVCEsat(BISS)transistor Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50V,2.7ANPN/NPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7ANPN/PNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7ANPN/PNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7ANPN/NPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7APNP/PNPlowVCEsat(BISS)transistor Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50V;3ANPNlowVCEsat(BISS)transistor DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedheatgene | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50V;3ANPNlowVCEsat(BISS)transistor DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedheatgene | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50V;3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
详细参数
- 型号：
MJE4350
- 制造商：
ISC
- 制造商全称：
Inchange Semiconductor Company Limited
- 功能描述：
Silicon PNP Power Transistors
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON/安森美 |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
询价 | ||
ON/安森美 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
询价 | ||
ON/安森美 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
isc |
2024 |
TO-3PN |
8000 |
国产品牌isc,可替代原装 |
询价 | ||
ON/安森美 |
22+ |
TO-3P |
96316 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ON/安森美 |
22+ |
TO-3P |
96316 |
询价 | |||
ON/安森美 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON |
24+ |
TO-3P |
67600 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
相关规格书
更多- MJE4351
- MJE4353
- MJE5030
- MJE5171
- MJE5180
- MJE5182
- MJE520
- MJE521_03
- MJE52T
- MJE5555
- MJE5730_06
- MJE5731
- MJE5731AG
- MJE5740
- MJE5740G
- MJE5742G
- MJE5850_06
- MJE5851
- MJE5852
- MJE5852G
- MJE6041
- MJE6044
- MJE700
- MJE700G
- MJE700T
- MJE701STU
- MJE702
- MJE702STU
- MJE703
- MJE703STU
- MJE710
- MJE711
- MJE720
- MJE722
- MJE800G
- MJE800T
- MJE801STU
- MJE802
- MJE802G
- MJE802T
- MJE803G
- MJE803T
- MJE8501
- MJE8503A
- MJEC15033TR
相关库存
更多- MJE4352
- MJE4353G
- MJE5170
- MJE5172
- MJE5181
- MJE51T
- MJE521
- MJE521G
- MJE53T
- MJE5730
- MJE5730G
- MJE5731A
- MJE5731G
- MJE5740_06
- MJE5742
- MJE5850
- MJE5850G
- MJE5851G
- MJE5852_03
- MJE6040
- MJE6043
- MJE6045
- MJE700_06
- MJE700STU
- MJE701
- MJE701T
- MJE702G
- MJE702T
- MJE703G
- MJE703T
- MJE710_08
- MJE712
- MJE721
- MJE800
- MJE800STU
- MJE801
- MJE801T
- MJE802_03
- MJE802STU
- MJE803
- MJE803STU
- MJE8500
- MJE8503
- MJE9780
- MJF122
