50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: ICand ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation

文件：83.83 Kbytes 页数：12 Pages

PHI

PHI

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z. FEATURES • Low collector-emitter saturation voltage • High collector current capability: ICand ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation

文件：162.23 Kbytes 页数：9 Pages

恩XP

50 V low VCEsat NPN transistor

文件：162.23 Kbytes 页数：9 Pages

PHI

PHI

50 V low VCEsat NPN transistor

DESCRIPTION\nNPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z.FEATURES\n• Low collector-emitter saturation voltage\n• High collector current capability: ICand ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat generation\n• Re • Low collector-emitter saturation voltage\n• High collector current capability: ICand ICM\n• High collector current gain (hFE) at high IC\n• Higher efficiency leading to less heat generation\n• Reduced PCB area requirements compared to DPAK.;

恩XP

丝印：PB4350；Package：SC-73；50 V low VCEsat NPN transistor

1. General description NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. 2. Features and benefits • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE ) at high IC • Higher efficiency l

文件：226.3 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：PB4350；Package：SOT223；50 V low VCEsat NPN transistor

文件：162.23 Kbytes 页数：9 Pages

PHI

PHI

丝印：pb4350；Package：SOT223；50 V low VCEsat PNP transistor

文件：156.52 Kbytes 页数：9 Pages

PHI

PHI