PB4350中文资料50 V low VCEsat NPN transistor数据手册恩XP规格书

描述 Description

DESCRIPTION
NPN low VCEsattransistor in a SOT223 plastic package. PNP complement: PBSS5350Z.FEATURES
• Low collector-emitter saturation voltage
• High collector current capability: ICand ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps, LEDs
– Inductive load driver, e.g.relays, buzzers, motors.

特性 Features

• Low collector-emitter saturation voltage
• High collector current capability: ICand ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.

应用 Application

• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps, LEDs
– Inductive load driver, e.g.relays, buzzers, motors.