Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803

文件：51.67 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

文件：256.45 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN (HIGH DC CURRENT GAIN)

文件：252.89 Kbytes 页数：6 Pages

SAMSUNG

三星

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

文件：346.01 Kbytes 页数：2 Pages

CENTRAL

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件：256.45 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V • DC Current Gain— : hFE = 750(Min) @ IC=-1.5 A • Complement to Type MJE800 APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

文件：245.04 Kbytes 页数：2 Pages

ISC

无锡固电

Plastic Darlington Complementary Silicon Power Transistors

designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件：81.9 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

4.0 A，60 V，PNP 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices. • High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc\n• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication\n• Choice of Packages- MJE700 and MJE800 series\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Central