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MJE700T

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

文件:256.45 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJE700T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件:194.68 Kbytes 页数:4 Pages

MOSPEC

统懋

MJE700T

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件:256.45 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MJE700T

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V • DC Current Gain— : hFE = 750(Min) @ IC=-1.5A • Complement to Type MJE800T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

文件:250.87 Kbytes 页数:2 Pages

ISC

无锡固电

MJE700T

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件:81.9 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE700T

Plastic Darlington Complementary Silicon Power Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.• High DC Current Gain —\n   hFE = 2000 (Typ) @ IC = 2.0 Adc\n• Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage\n   Multiplication\n• Choice of Packages —\n   MJE700 and MJE800 series\n  

恩XP

恩智浦

恩XP

MJE700T

POWER TRANSISTORS(4.0A,60-80V,40W)

Mospec

统懋

MJE700T

Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-220 Box

NJS

技术参数

  • Case:

    TO-220

  • Configuration/ Description:

    PNP Darlington

  • Polarity:

    PNP

  • IC MAX:

    4A

  • PD MAX:

    50W

  • VCEO MAX:

    60V

  • hFE MIN:

    750

  • @VCE:

    3V

  • VCE(SAT) MAX:

    2.5V

  • @IC:

    1.5A

  • @IB:

    30mA

  • fT MIN:

    1MHz

供应商型号品牌批号封装库存备注价格
24+
TO-220
10000
全新
询价
ON/安森美
22+
TO-220
6000
十年配单,只做原装
询价
UTG
23+
SOT-89
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON/安森美
22+
TO-220
97711
询价
ON
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
MOTOROLA/摩托罗拉
25+
TO-225AATO-126
54558
百分百原装现货 实单必成 欢迎询价
询价
SGS
05+
原厂原装
291
只做全新原装真实现货供应
询价
NEXPERIA/安世
23+
SOT402-1
69820
终端可以免费供样,支持BOM配单!
询价
ON
24+
TO-126
6430
原装现货/欢迎来电咨询
询价
更多MJE700T供应商 更新时间2025-10-5 16:01:00