50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

文件：79 Kbytes 页数：8 Pages

PHI

飞利浦

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain

文件：100.84 Kbytes 页数：14 Pages

恩XP

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：696.38 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4350SPN；Package：SO8；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：730.36 Kbytes 页数：19 Pages

NEXPERIA

安世

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：730.36 Kbytes 页数：19 Pages

NEXPERIA

安世

丝印：4350SS；Package：SO8；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：696.38 Kbytes 页数：14 Pages

NEXPERIA

安世

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain

文件：100.84 Kbytes 页数：14 Pages

恩XP

NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

General description PNP/PNP double low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain (

文件：107.36 Kbytes 页数：14 Pages

恩XP

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

文件：140.42 Kbytes 页数：19 Pages

PHI

飞利浦

50 V low VCEsat NPN transistor

DESCRIPTION\nNPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S.FEATURES\n• High power dissipation (830 mW)\n• Ultra low collector-emitter saturation voltage\n• 3 A continuous current\n• High current switching\n• Improved device reliability due to reduced heat generation\ • High power dissipation (830 mW)\n• Ultra low collector-emitter saturation voltage\n• 3 A continuous current\n• High current switching\n• Improved device reliability due to reduced heat generation;

恩XP