PBSS4350SPN - 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor - NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5350SS ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n·AEC-Q101 qualified;

Nexperia

安世

PBSS4350SS - 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor - NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5350SS ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 3A SC59

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