50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

文件：79 Kbytes 页数：8 Pages

PHI

飞利浦

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

文件：70.54 Kbytes 页数：8 Pages

PHI

飞利浦

50 V low VCEsat NPN transistor

DESCRIPTION\nNPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D.FEATURES\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transis • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.;

恩XP

恩智浦

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

文件：70.54 Kbytes 页数：8 Pages

PHI

飞利浦

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard package

文件：316.41 Kbytes 页数：9 Pages

恩XP

丝印：43；Package：SOT457；50 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

文件：503.85 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：G6；Package：SOT1061D；50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabili

文件：284.51 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：G6；Package：SOT1061D；50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：285.73 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

文件：79 Kbytes 页数：8 Pages

PHI

飞利浦

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：696.38 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司