PBSS4350SS

Marking：4350SS；Package：SO8；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4350T

50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedheatgene

PBSS4350T

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

PBSS4350T

Marking：ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability

PBSS4350T-Q

Marking：ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability

PBSS4350X

Marking：S43；Package：SOT89；50 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT89plasticpackage. PNPcomplement:PBSS5350X 2.Featuresandbenefits •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolesshea

PBSS4350Z

50 V low VCEsat NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration

PBSS4350Z

Marking：PB4350；Package：SC-73；50 V low VCEsat NPN transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyl

PBSS4350D

Low VCEsat (BISS) transistors

PBSS4350D_15

50 V low VCEsat NPN transistor