50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat gene

文件：84.47 Kbytes 页数：10 Pages

PHI

飞利浦

50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat gene

文件：368.74 Kbytes 页数：10 Pages

恩XP

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：950.45 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：1.30095 Mbytes 页数：13 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：230.38 Kbytes 页数：12 Pages

NEXPERIA

安世

50 V; 3 A NPN low VCEsat

文件：368.74 Kbytes 页数：10 Pages

PHI

飞利浦

NPN Transistors

文件：1.69201 Mbytes 页数：5 Pages

KEXIN

科信电子

NPN Transistors

文件：1.73385 Mbytes 页数：5 Pages

KEXIN

科信电子

50 V; 3 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5350T. • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• AEC-Q101 qualified;

Nexperia

安世