PBSS4350T-Q中文资料安世数据手册PDF规格书

1. General description

NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

PNP complement: PBSS5350T-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

• High collector current capability

• High collector current gain

• Improved efficiency due to reduced heat generation.

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Power management applications

• Low and medium power DC/DC converters

• Supply line switching

• Battery chargers

• Linear voltage regulation with low voltage drop-out (LDO).