丝印：ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability

文件：230.38 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V; 3 A NPN low VCEsat transistor

• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat\n• High collector current capability\n• High collector current gain\n• Improved efficiency due to reduced heat generation.\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

Silicon NPN transistor in a SOT-89 Plastic Package

文件：913.97 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

50 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X 2. Features and benefits • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less hea

文件：277.99 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司