POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

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MOSPEC

统懋

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V • DC Current Gain— : hFE = 750(Min) @ IC= 2A • Complement to Type MJE702T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

文件：250.84 Kbytes 页数：2 Pages

ISC

无锡固电

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box

NJS

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington Central Semiconductor

Central