| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJE702 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJE702 | NPN (HIGH DC CURRENT GAIN)
| SamsungSamsung Group 三星三星半导体 |  | |
MJE702 | Plastic Darlington Complementary Silicon Power Transistors ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
MJE702 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
MJE702 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉 |  | |
MJE702 | Monolithic Construction With Built-in Base- Emitter Resistors MonolithicConstructionWithBuilt-inBase-EmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC •ComplementtoMJE800/801/802/803 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MJE702 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
Plastic Darlington Complementary Silicon Power Transistors Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat | MOSPEC MOSPEC |  | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
isc Silicon PNP Darlington Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 80V 4A TO126 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
包装：管件 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 80V 4A TO126-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
PHENOLICINSTRUMENTCASES [KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | ||
(22.2mm)SingleTurnWirewound(PrecisionPotentiometer)s FEATURES •Largerangeofohmicvalues:From5upto 100k •Bushingmountorservomounttypesare available •Extratapsuponrequest •Gangableupto6sections •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 |  | ||
IndustrialWirelessRadio | REDLION Red Lion Controls. Inc |  | ||
6CHANNELSADJUSTABLECONSTANTCURRENTLEDDRIVER DESCRIPTION A701/2areadjustableconstantcurrentdriversforLEDapplications.SixregulatedcurrentportsaredesignedtoprovideuniformandpureDCconstantcurrentsinksfordrivingLEDswithinalargerangeVFvariation. FEATURES ■6constant-currentoutputchannels ■Outputcurrentdev | ADDTEK ADDtek Corp |  | ||
A-702AAPSPSTN.O.,600Amps,28VDC,CutoutReverseCurrent | MACOM Tyco Electronics |  | ||
CMOSLowVoltage2ohmSPSTSwitches GENERALDESCRIPTION TheADG701/ADG702aremonolithicCMOSSPSTswitches.Theseswitchesaredesignedonanadvancedsubmicronprocessthatprovideslowpowerdissipationyethighswitchingspeed,lowonresistance,andlowleakagecurrents.Inaddition,−3dBbandwidthsofgreaterthan200MHzca | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | ||
DevicesConnected | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
4A
- 最大工作频率：
>1MHZ
- 引脚数：
3
- 可代换的型号：
BD262A,BD680,BD780,FC50B,2N6036,
- 最大耗散功率：
40W
- 放大倍数：
β>750
- 图片代号：
B-21
- vtest：
80
- htest：
1000100
- atest：
4
- wtest：
40
详细参数
- 型号：
MJE702
- 功能描述：
达林顿晶体管 4A 80V Bipolar
- RoHS：
否
- 制造商：
Texas Instruments
- 配置：
Octal
- 晶体管极性：
NPN 集电极—发射极最大电压
- VCEO：
50 V 发射极 - 基极电压
- VEBO：
集电极—基极电压
- 最大直流电集电极电流：
0.5 A
- 最大工作温度：
+ 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOIC-18
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
08+(pbfree) |
TO-225 |
8866 |
询价 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON/ST |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ON |
23+ |
TO-126 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
ON |
20+ |
TO-126 |
90000 |
原装正品现货/价格优势 |
询价 | ||
FAIRC |
2020+ |
TO-126 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
ON |
2021+ |
TO-126 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ON/安森美 |
23+ |
TO-225AATO-126 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
ON/安森美 |
17+;19+ |
TO-126 |
75000 |
全新现货 |
询价 |
