HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swit

文件：128.9 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

HiPerFETTM Power MOSFETs ISOPLUS247

文件：34.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier

文件：110.12 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier

文件：104.55 Kbytes 页数：4 Pages

IXYS

艾赛斯