| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFN55N50 | HiPerRF Power MOSFETs HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFN55N50 | HiPerFET Power MOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFN55N50 | HiPerFET Power MOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Integrated Circuits Division | IXYS | |
HiPerRF Power MOSFETs HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETTMPowerMOSFET HiPerFETPowerMOSFET SingleDieMOSFET Features •Lowcostdirect-copperbondedaluminiumpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •2500Visolation •Lowdraintocasecapacitance •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure • | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerRFPowerMOSFETs HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerRFTMPowerMOSFETs HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFET-TMPowerMOSFETsISOPLUS247-TM HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching VDSS=500V ID25=55A RDS(on)=90mΩ trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerRFPowerMOSFETs HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerRFTMPowerMOSFETs HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXFN55N50
- 功能描述：
MOSFET 55 Amps 500V 0.08 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXFN |
23+ |
NA |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
IXYS |
19+/20+ |
SOT-227B |
1000 |
主打产品价格优惠.全新原装正品 |
询价 | ||
Littelfuse/IXYS |
23+ |
SOT-227 |
7800 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IXYS |
23+ |
专业模块 |
789 |
询价 | |||
IXYS |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
IXYS |
23+ |
原厂原装 |
1042 |
全新原装现货 |
询价 | ||
IXYS |
2022 |
SOT-227B |
58 |
原厂原装正品,价格超越代理 |
询价 | ||
23+ |
87 |
专业模块销售,欢迎咨询 |
询价 | ||||
IXYS |
23+ |
模块 |
5000 |
原装正品,假一罚十 |
询价 | ||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
相关规格书
更多- IXFN56N90P
- IXFN60N80P
- IXFN64N50PD2
- IXFN70N60Q2
- IXFN80N50
- IXFN80N50Q2
- IXFN80N60P3
- IXFN82N60Q3
- IXFP102N15T
- IXFP10N80P
- IXFP12N50P
- IXFP14N60P
- IXFP22N60P3
- IXFP3N120
- IXFP5N100P
- IXFP5N50P3
- IXFP76N15T2
- IXFQ22N60P3
- IXFQ50N60P3
- IXFR120N20
- IXFR15N100Q3
- IXFR180N10
- IXFR18N90P
- IXFR20N100P
- IXFR230N20T
- IXFR24N80P
- IXFR26N120P
- IXFR32N100Q3
- IXFR32N80P
- IXFR36N50P
- IXFR40N90P
- IXFR44N50Q3
- IXFR44N80P
- IXFR64N50Q3
- IXFR64N60Q3
- IXFR80N50Q3
- IXFR90N30
- IXFT140N10PTRL
- IXFT18N100Q3
- IXFT20N80P
- IXFT24N90P
- IXFT26N60Q
- IXFT32N50Q
- IXFT36N60P
- IXFT42N50P2
相关库存
更多- IXFN60N60
- IXFN64N50P
- IXFN64N60P
- IXFN73N30
- IXFN80N50P
- IXFN80N50Q3
- IXFN82N60P
- IXFN90N30
- IXFP10N60P
- IXFP110N15T2
- IXFP130N10T2
- IXFP180N10T2
- IXFP26N50P3
- IXFP4N100Q
- IXFP5N100PM
- IXFP6N120P
- IXFP7N80P
- IXFQ28N60P3
- IXFQ60N50P3
- IXFR140N30P
- IXFR180N085
- IXFR180N15P
- IXFR200N10P
- IXFR20N120P
- IXFR24N50Q
- IXFR26N100P
- IXFR30N60P
- IXFR32N50Q
- IXFR32N80Q3
- IXFR36N60P
- IXFR44N50P
- IXFR44N60
- IXFR48N50Q
- IXFR64N60P
- IXFR80N50P
- IXFR80N60P3
- IXFT140N10P
- IXFT15N100Q3
- IXFT18N90P
- IXFT20N80Q
- IXFT26N50Q
- IXFT320N10T2
- IXFT36N50P
- IXFT400N075T2
- IXFT44N50P
