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IXFN55N50

HiPerRF Power MOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFN55N50

HiPerFET Power MOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFN55N50

HiPerFET Power MOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFN55N50F

HiPerRF Power MOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFE55N50

HiPerFETTMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features •Lowcostdirect-copperbondedaluminiumpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •2500Visolation •Lowdraintocasecapacitance •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •

IXYS

IXYS Integrated Circuits Division

IXFG55N50

HiPerFETPowerMOSFETsISOPLUS247

IXYS

IXYS Integrated Circuits Division

IXFK55N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK55N50

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFK55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFK55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFK55N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK55N50F

HiPerRFTMPowerMOSFETs

HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Integrated Circuits Division

IXFR55N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXFR55N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

VDSS=500V ID25=55A RDS(on)=90mΩ trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste

IXYS

IXYS Integrated Circuits Division

IXFX55N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX55N50

HiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFX55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFX55N50

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFX55N50F

HiPerRFTMPowerMOSFETs

HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFN55N50

  • 功能描述:

    MOSFET 55 Amps 500V 0.08 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXFN
23+
NA
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
询价
IXYS
19+/20+
SOT-227B
1000
主打产品价格优惠.全新原装正品
询价
Littelfuse/IXYS
23+
SOT-227
7800
支持大陆交货,美金交易。原装现货库存。
询价
德国IXYS艾塞斯
23+
MOUDLE
12000
原装正品假一罚十支持实单
询价
IXYS
23+
模块
900
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
IXYS
23+
原厂原装
1042
全新原装现货
询价
IXYS
2022
SOT-227B
58
原厂原装正品,价格超越代理
询价
23+
87
专业模块销售,欢迎咨询
询价
IXYS
23+
模块
5000
原装正品,假一罚十
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多IXFN55N50供应商 更新时间2024-6-24 9:24:00