HiPerFET Power MOSFET Q-Class

文件：116.2 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

文件：81.23 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel MOSFET

FEATURES · Drain Current -ID= 3.5A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · DC-DC converters · AC motor control · Battery chargers

文件：370.08 Kbytes 页数：3 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL94V-0 flammability classification Advantages • Eas

文件：94.26 Kbytes 页数：4 Pages

IXYS

艾赛斯