HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

文件：38.51 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 105A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：329.92 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier App

文件：47.98 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=150A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：367.05 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：294.79 Kbytes 页数：2 Pages

ISC

无锡固电