HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier App

文件：47.98 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=150A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：367.05 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：294.79 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHTTM Power MOSFET N-Channel Enhancement Mode

PolarHT™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：258.25 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：300.66 Kbytes 页数：2 Pages

ISC

无锡固电