N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

Polar Power MOSFET HiPerFET

文件：116.2 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

文件：121.72 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-CHANNEL IGBT

FEATURES  Low gate charge  Trench FS Technology,  Saturation voltage: VCE(sat), typ = 1.7V IC = 30A and TC = 25°C APPLICATIONS  Induction heating(IH)  Inverterized microwave ovens  Soft switching applications

文件：350.79 Kbytes 页数：8 Pages

GWSEMI

唯圣电子