N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

Polar Power MOSFET HiPerFET

文件：121.72 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-CHANNEL IGBT

FEATURES  Low gate charge  Trench FS Technology,  Saturation voltage: VCE(sat), typ = 1.7V IC = 30A and TC = 25°C APPLICATIONS  Induction heating(IH)  Inverterized microwave ovens  Soft switching applications

文件：350.79 Kbytes 页数：8 Pages

GWSEMI

唯圣电子

Polar Power MOSFET HiPerFET

文件：121.72 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

文件：113.34 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

文件：116.2 Kbytes 页数：4 Pages

IXYS

艾赛斯