IXFQ26N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFQ26N50

包装：管件 封装/外壳：TO-3P-3，SC-65-3 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 500V 26A TO3P

IXFQ26N50P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●FastIntrinsicRectifier ●AvalancheRated ●LowRDS(ON)andQG ●LowPackageInductance Advantages ●HighPowerDensity ●EasytoMount ●SpaceSavings Applications ●Switch-ModeandResonant-ModePowerSu

IXFQ26N50Q

包装：盒 封装/外壳：TO-3P-3，SC-65-3 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 500V 26A TO3P

26N50

26A,500VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC26N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

IXFC26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

IXFC26N50

HiPerFETMOSFETsISOPLUS220

ElectricallyIsolatedBackSurface N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation
Lowdraintotabcapacitance(

IXFC26N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

IXFC26N50P

PolarHVHiPerFETPowerMOSFETISOPLUS220

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters

IXFH26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

IXFH26N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFH26N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFH26N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

IXFH26N50P

AvalancheRatedFastInstrinsicDiode

VDSS=500V ID25=26A RDS(on)≤230mΩ trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou

IXFH26N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

IXFH26N50Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification

IXFM26N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFM26N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFM26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

IXFP26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives.