N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

Package：TO-247-3；包装：盒 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 900V ISOPLUS247

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

文件：128.389 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.43 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-CLASS

HiPerFET Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt, Low trr Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting control

文件：87.15 Kbytes 页数：2 Pages

IXYS

艾赛斯